2731-100Mr3 microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. 2731-100M 100 watts, 36 volts, 200s, 10% radar 2700-3100 mhz general description the 2731-100M is an internally matched, common base bipolar transistor capable of providing 100 watts of pulsed rf output power at 200s pulse width, 10% duty factor across the 2700 to 3100 mhz band. the transistor prematch and test fixture has been optimized through the use of 10 ohm trl analysis. this ceramic sealed transistor is specifically designed for s-band radar applications. it utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. case outline 55ks-1 common base absolute maximum ratings maximum power dissipation device dissipation @ 25 c 1 575 w maximum voltage and current collector to base voltage (bv ces ) 65 v emitter to base voltage (bv ebo ) 3.0 v collector current (i c ) 15.0 a maximum temperatures storage temperature -65 to +200 c operating junction temperature +200 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power output f=2700-3100 mhz 100 115 140 w p g power gain pulse width = 200 s 8.0 8.5 9.4 db c collector efficiency duty factor = 10 % 40 % r l return loss power input = 16w -7 db p d pulse droop vcc = +36v 0.6 db vswr-t load mismatch tolerance f = 2700, 2900, 3100 mhz 2:1 functional characteristics @ 25 c bv ebo emitter to base breakdown ie = 30 ma 3.0 v bv ces collector to emitter breakdown ic = 120 ma 65 v h fe dc ? current gain vce = 5v, ic = 600 ma 15 jc 1 thermal resistance 0.43 c/w issue march 2006
2731-100Mr3 microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. 2731-100M vcc = 36 volts, pulse width = 200 s, duty = 10 % pin vs. pout 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 0.0 5.0 10.0 15.0 20.0 25.0 pin (watts) pout (watts) 2.7ghz 2.8ghz 2.9ghz 3.0ghz 3.1ghz efficiency vs. frequency 30 35 40 45 50 55 2.65 2.7 2.75 2.8 2.85 2.9 2.95 3 3.05 3.1 3.15 frequency (ghz) efficiency (%)
2731-100Mr3 microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. gain vs. frequency 0 1 2 3 4 5 6 7 8 9 2.6 2.7 2.8 2.9 3 3.1 3.2 frequency (ghz) gain (db) impedance curves will be added at the completion of the characterization. impedance data freq (ghz) zs zl 2.7 8.87-j12.64 4.33-j4.67 2.8 8.24-j10.26 3.95-j4.94 2.9 8.54-j8.06 3.47-j5.08 3.0 9.85-j6.05 2.96-j5.06 3.1 10.26-j4.88 2.48-j4.92
2731-100Mr3 microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. circuit component physical circuit dimension item description value item w (mil) l (mil) c1 chip cap a size 9.1pf d1 35 210 c2 chip cap b size 10,000pf d2 318 158 c3 chip cap b size 100pf d3 58 114 c4 electrolytic cap 2200uf d4 500 195 r1 chip resistor 20 ohms d5 124 161 r2 fix resistor 1.5 ohms d6 530 156 l1 silver ribbon l=870 mil, w=70 mil. d7 770 196 l2 copper wire 21 awg, 560 mil d8 200 176 material roger-duroid 6006 @ 25mil, er=6.15, 1oz cu d9 48 92 d10 272 119 d11 35 150 d12 35 200
2731-100Mr3 microsemi reserves the right to change, without notice, the specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. 2731-100M
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